Wednesday, May 2025

03:30 PM - 03:50 PM

Room: LL21CD

Session: Advanced TFT and Fingerprint Sensor Manufacturing

A Study on Maskless Process of Metal Insulator Metal Storage Cap Doping

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  Principal Engineer

  In Young Chung , MA

  Samsung Display Co., Ltd.

Description:

Storage cap was formed by doping poly Si under the gate insulator in the contact hole process without using mask. It was confirmed that boron was injected into Poly Si by passing through the gate metal and it succeeded in securing flat CV characteristics. Using Half-tone process, the problem of circuit short and the scan signal RC delay caused by the thinning of the gate line have been solved.