Thursday, May 2025
01:50 PM - 02:10 PM
Room: LL21EF
Session: High Mobility Oxide TFTs
Poly-IGO TFT with Field-Effect Mobility over 40 cm2/Vs: Mobility Modeling and Self-Heating Simulation
Description:
A poly-IGO TFT with field-effect mobility (uFE)>40cm2/Vs has been analyzed, which is the highest among oxide semiconductor TFTs using common materials and mature production processes. The mobility modeling clarifies the intrinsic mobility positively depends on the carrier density, and the self-heating simulation clarifies it slightly positively depends on the temperature, which enhance uFE. We expect a-IGZO TFTs can be replaced in the near future.