Thursday, May 2025
09:20 AM - 09:40 AM
Room: LL21EF
Session: Artificial Intelligence for Active Matrix Devices
Improving the Reliability of High-Mobility Oxide TFTs Through TCAD Simulation of Optimizing Device Structure
Description:
High-mobility oxide TFTs have great application prospects in high-end display products. To achieve mass production applications, improving the reliability of high-mobility oxide backplanes has become an urgent issue to be resolved. During the development of IGZTO high-mobility oxide devices, we found that the TFT device is turned on, as the Vds voltage increases, the drain current will suddenly drop sharply at a certain critical point. In response to this issue, we analyzed the degradation mechanism: the hot-carrier effect under the action of a large electric field in the pinch-off region leads to defects increase in channel at the drain end, causing device degradation. TCAD simulation reproduced the IV degradation phenomenon, confirming the defects increase in channel at the drain end. The simulation of the device size's impact on the channel electric field showed that increasing the channel length and reducing the drain voltage can effectively reduce the maximum electric field, while the device width has no effect. Additionally, the simulation compared the electric field distribution of four different channel structures, and the results indicated: horizontal electric field TG LS-Gate ? LS-Source > TG without-LS > TG Double-Gate, which provides a reference direction for achieving high-reliability high-mobility oxide backplanes and improving drain current down phenomenon .