Thursday, May 2025

11:20 AM - 11:40 AM

Room: LL21EF

Session: New Oxide TFTs and Applications

IGZO-Based Synaptic Transistors for Neuromorphic Applications

Invited

• Soo-Yeon Lee

  Seoul National University

Description:

In this paper, we introduced indium-gallium-zinc oxide (IGZO) synaptic transistors based on charge trapping. By employing a degenerate IGZO trap layer, electron de-trapping efficiency was significantly improved. Additional process optimization was conducted to address the insufficient device characteristics as a synapse, resulting in notable improvements in program/erase and retention performance. The optimized device exhibits improved electrical characteristics, highlighting their potential as promising candidates for neuromorphic applications.