Thursday, May 2025

04:10 PM - 04:30 PM

Room: LL21EF

Session: Reliable Oxide TFTs

A Novel Fabrication Process for Enhancing the Reliability of IGZO Thin-Film Transistor

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  senior research engineer

  Bokyoung Lee , MA

  LG Display Co.

Description:

This study presents the impact of IGZO/GI interface contamination and carrier fluctuations within IGZO due to the fabrication process of indium gallium zinc oxide (IGZO) thin-film transistors (TFTs) with a top-gate structure. To address these challenges and improve device reliability, a novel island-shaped gate-insulated (I-GI) structure, passivated with a silicon oxide (SiO?) thin film, is proposed.